SiC Substrates
Silicon carbide (SiC) substrate material is an essential material to support the development of the power electronics industry. High purity...
SiC Substrates
Silicon carbide (SiC) substrate material is an essential material to support the development of the power electronics industry. High purity semi-insulating SiC is mainly used in 5G communication applications. It has the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed and large-capacity information transmission, and is regarded as the most ideal materia...
- ManufacturerOST Photonics
- CategoryCrystal Wafer and Substrate
- Lead TimeQuoted per order
- CustomizationSize, orientation and surface finish to drawing
SiC Substrate
Silicon carbide (SiC) substrate material is an essential material to support the development of the power electronics industry. High purity semi-insulating SiC is mainly used in 5G communication applications. It has the advantages of improving the radio frequency range, ultra-long distance recognition, anti-interference, high-speed and large-capacity information transmission, and is regarded as the most ideal material for making microwave power devices. N-type SiC is mainly used in new energy vehicles, high voltage transmission and transformation stations, white goods, high-speed trains, motors, photovoltaic inverter, pulse power supply and other fields, it has the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment volume, improving equipment performance and so on, it has irreplaceable advantages in the production of power electronic devices.
OST Photonics offers high quality SiC (4H-SiC, 6H-SiC) substrates for researchers and industries. Crystal orientation, size and thickness can be customized according to your requirements.
Features
- Large band gap (about 3 times of Si)
- High critical field strength (about 10 times of Si)
- High thermal conductivity (about 3 times of Si)
Applications
- 5G Wireless Communication
- Microwave power device
- New energy automobile
- Pulsed power supply
- Photovoltaic inverter
Processing Capability
- Orientation: <0001>,<0001>off 4°, etc.
- Dimension: 4”, 6”, 20x20mm, 15x15mm, 10x10mm, 5x5mm etc.
- Thickness: 0.33mm, 0.35mm, 0.5mm etc.
- Available items: wafers, substrates, blanks and customized optics
Specification and Properties of SiC Substrates (4H-SiC, 6H-SiC)
| Crystal Structure | Hexagon | ||
| Lattice Constant | a=3.08 Å ,c=15.08 Å | ||
| Marshalling Sequence | ABCACB (6H), ABCBABCB (4H) | ||
| Band Gap | 2.93 eV | ||
| Hardness | 9.2 Mohs | ||
| Heat Conductivity @300K | 5 W/cm.k | ||
| Dielectric Constant | e(11)=e(22)=9.66 e(33)=10.33 | ||
| Conductor type | SI | N | |
| Dopant | Undoped | Vanadium | Nitrogen |
| Resistivity | ˃1×10^7 ohm.cm | ˃1×10^5 ohm.cm | 0.01-0.2 ohm.cm |
| Orientation | <0001>, <0001>off 4°, etc. | ||
| Orientation Tolerance | ±0.5° or better | ||
| Dimension | 4”, 6”, 20x20mm, 15x15mm, 10x10mm, 5x5mm etc. | ||
| Dimension Tolerance | ±0.1 mm or better | ||
| Thickness | 0.33mm, 0.35mm, 0.5mm etc. | ||
| Thickness Tolerance | ±0.05 mm or better | ||
| Surface Finish | Single side polished (SSP)/Double sides polished (DSP) | ||
| Surface Roughness | Ra≤5Å (5µmx5µm) | ||
| Package | Class 100 clean bag, Class 1000 super clean room |
Other Crystal Wafer and Substrate Materials
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